发明名称 SOLID-STATE IMAGING DEVICE, DRIVING METHOD FOR SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPLIANCE
摘要 The present disclosure relates to a solid-state imaging device, a driving method for the same, and an electronic appliance, and an object is to provide a solid-state imaging device that can achieve the pixel miniaturization and the global shutter function with higher sensitivity and saturated charge amount. Another object is to provide an electronic appliance including the solid-state imaging device. In a solid-state imaging device 1 having the global shutter function, a first charge accumulation unit 18 and a second charge accumulation unit 25 are stacked in the depth direction of a substrate 12, and the transfer of the signal charges from the first charge accumulation unit 12 to the second charge accumulation unit 25 is conducted by a vertical first transfer transistor Tr1. Thus, the pixel miniaturization can be achieved.
申请公布号 US2014347538(A1) 申请公布日期 2014.11.27
申请号 US201214362797 申请日期 2012.12.04
申请人 Sony Corporation 发明人 Toda Atsushi
分类号 H01L27/146;H04N5/374 主分类号 H01L27/146
代理机构 代理人
主权项 1. A solid-state imaging device comprising: a substrate; a photoelectric conversion unit that generates signal charges corresponding to light quantity; a floating diffusion unit that is provided for the substrate and that converts the signal charges into voltage; a first charge accumulation unit that is provided for the substrate and that accumulates the signal charges generated in the photoelectric conversion unit; a second charge accumulation unit that is provided on the first charge accumulation unit in a substrate thickness direction and that is formed electrically isolated from the first charge accumulation unit; a first transfer transistor that includes a first transfer gate electrode formed embedded in the substrate to a depth of such a degree that the first transfer gate electrode reaches the first charge accumulation unit from a substrate surface provided with the second charge accumulation unit; and a second transfer transistor that transfers the signal charges accumulated in the second charge accumulation unit to the floating diffusion unit.
地址 Tokyo JP