Testing of Thru-Silicon Vias

摘要

A system and a method are disclosed for testing thru-silicon vias (TSVs) in a silicon die. A silicon die containing multiple TSVs is mounted on a wafer tape. Two probe points are probed on the exposed side of the silicon die. A resistance is measured between the two probe points and an electrical integrity is determined based on the measured resistance.

主权项

1. A method for testing thru-silicon vias (TSVs) in a silicon die, the TSVs for providing interconnection between opposite sides of the silicon die, the method comprising:
mounting the silicon die on wafer tape, the wafer tape having a resistivity that is sufficiently low to form a conductive path between TSVs; contacting two probe points on the exposed side of the silicon die, each probe point electrically connected to one of two different TSVs; measuring a resistance between the two probe points; and determining an electrical integrity of the two TSVs based on the measured resistance.