发明名称 |
SEMICONDUCTOR STRUCTURE WITH SACRIFICIAL ANODE AND METHOD FOR FORMING |
摘要 |
A packaged semiconductor device is made by forming a conductive pad on an external surface of an integrated circuit device, forming a passivation layer over the conductive pad, removing a portion of the passivation layer over a bond area on the conductive pad, forming a sacrificial anode around a majority of a periphery surrounding the bond area, forming a conductive bond in the bond area, and forming an encapsulating material around the conductive bond and an exposed portion of the sacrificial anode. |
申请公布号 |
US2014346663(A1) |
申请公布日期 |
2014.11.27 |
申请号 |
US201313898949 |
申请日期 |
2013.05.21 |
申请人 |
Chopin Sheila F.;Ding Min;Mathew Varughese;Roth Scott S. |
发明人 |
Chopin Sheila F.;Ding Min;Mathew Varughese;Roth Scott S. |
分类号 |
H01L23/00 |
主分类号 |
H01L23/00 |
代理机构 |
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代理人 |
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主权项 |
1. A method for fabricating a semiconductor structure comprising:
forming a conductive layer on a integrated circuit (IC) wafer; forming a first sacrificial layer over a major surface of the conductive layer; forming a passivation layer over the first sacrificial layer; removing a portion of the passivation layer and a portion of the first sacrificial layer from a bond area on the major surface of the conductive layer; and forming an encapsulating material over the passivation layer and in contact with an exposed portion of the sacrificial layer. |
地址 |
Austin TX US |