SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

A semiconductor device includes an interlayer insulating film on a substrate, the interlayer insulating film including first and second trenches, a gate insulating film in the first and second trenches, a first conductivity type work function control film on the gate insulating film in the first trench, a second conductivity type work function control film on the gate insulating film in the second trench, a first gate metal on the first conductivity type work function control film, the first gate metal filling the first trench, a second gate metal on the gate insulating film in the second trench, and a carrier mobility improving film on the second conductivity type work function control film, the carrier mobility improving film filling the second trench.

主权项

1. A semiconductor device, comprising:
an interlayer insulating film on a substrate, the interlayer insulating film including first and second trenches; a gate insulating film in the first and second trenches; a first conductivity type work function control film on the gate insulating film in the first trench; a second conductivity type work function control film on the gate insulating film in the second trench; a first gate metal on the first conductivity type work function control film, the first gate metal filling the first trench; a second gate metal on the gate insulating film in the second trench; and a carrier mobility improving film on the second conductivity type work function control film, the carrier mobility improving film filling the second trench.