SEMICONDUCTOR DEVICES INCLUDING PROTRUDING INSULATION PORTIONS BETWEEN ACTIVE FINS

摘要

A semiconductor device can include a field insulation layer including a planar major surface extending in first and second orthogonal directions and a protruding portion that protrudes a particular distance from the major surface relative to the first and second orthogonal directions. First and second multi-channel active fins can extend on the field insulation layer, and can be separated from one another by the protruding portion. A conductive layer can extend from an uppermost surface of the protruding portion to cross over the protruding portion between the first and second multi-channel active fins.

主权项

1. A semiconductor device comprising:
a field insulation layer including a first region having a planar major surface extending in first and second orthogonal directions and a second region vertically disposed on the major surface, a top surface of the second region having a particular distance from the major surface; first and second multi-channel active fins extending on the field insulation layer, the first and second multi-channel active fins separated by the second region of the field insulation layer which extends orthogonally with respect to the first and second multi-channel active fins; a first gate disposed on the first multi-channel active fin and a second gate disposed on the second multi-channel active fin; and a first epitaxial source/drain region disposed between the second region of the field insulation layer and the first gate, and a second epitaxial source/drain region disposed between the second region of the field insulation layer and the second gate.