HIGH VOLTAGE PMOS (HVPMOS) TRANSISTOR WITH A COMPOSITE DRIFT REGION AND MANUFACTURE METHOD THEREOF

摘要

In one embodiment, method of making a high voltage PMOS (HVPMOS) transistor, can include: (i) providing a P-type substrate; (ii) implanting N-type dopants in the P-type substrate; (iii) dispersing the implanted N-type dopants in the P-type substrate to form a deep N-type well; (iv) implanting P-type dopants of different doping concentrations in the deep N-type well along a horizontal direction of the deep N-type well; and (v) dispersing the implanted P-type dopants to form a composite drift region having an increasing doping concentration and an increasing junction depth along the horizontal direction of the deep N-type well.

主权项

1. A high voltage PMOS (HVPMOS) transistor, comprising:
a) a P-type substrate; b) a deep N-type well in said P-type substrate; and c) a composite drift region in said deep N-type well, wherein said composite drift region comprises an increasing doping concentration and an increasing junction depth along a horizontal direction of said deep N-type well.