| 发明名称 |
SEMICONDUCTOR DEVICE WITH SCHOTTKY DIODE AND MANUFACTURING METHOD THEREOF |
| 摘要 |
A semiconductor device with an embedded schottky diode and a manufacturing method thereof are provided. A semiconductor device having a schottky diode include: an epilayer of a first conductivity type, a body layer of a second conductivity type, and a source layer of the first conductivity type arranged in that order; a gate trench that extends from the source layer to a part of the epilayer; a body trench formed a predetermined distance from the gate trench and extends from the source layer to a part of the epilayer; and a guard ring of the second conductivity type that contacts an outer wall of the body trench and formed in the epilayer. |
| 申请公布号 |
US2014346594(A1) |
申请公布日期 |
2014.11.27 |
| 申请号 |
US201314011071 |
申请日期 |
2013.08.27 |
| 申请人 |
MagnaChip Semiconductor, Ltd. |
发明人 |
HEBERT Francois |
| 分类号 |
H01L27/06;H01L21/8234 |
主分类号 |
H01L27/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device having a schottky diode, the semiconductor device comprising:
an epilayer of a first conductivity type, a body layer of a second conductivity type, and a source layer of the first conductivity type arranged in that order; a gate trench that extends from the source layer to a part of the epilayer; a body trench formed a predetermined distance from the gate trench and extends from the source layer to a part of the epilayer; and a guard ring of the second conductivity type that contacts an outer wall of the body trench and formed in the epilayer. |
| 地址 |
Cheongju-si KR |
