| 发明名称 |
ASYMMETRIC FINFET SEMICONDUCTOR DEVICES AND METHODS FOR FABRICATING THE SAME |
| 摘要 |
Asymmetric FinFET devices and methods for fabricating such devices are provided. In one embodiment, a method includes providing a semiconductor substrate comprising a plurality of fin structures formed thereon and depositing a conformal liner over the fin structures. A first portion of the conformal liner is removed, leaving a first space between the fins structures and forming a first metal gate in the first space between the fin structures. A second portion of the conformal liner is removed, leaving a second space between the fin structures and forming a second metal gate in the second space between the fin structures. |
| 申请公布号 |
US2014346574(A1) |
申请公布日期 |
2014.11.27 |
| 申请号 |
US201313902540 |
申请日期 |
2013.05.24 |
| 申请人 |
International Business Machines Corporation ;GLOBALFOUNDRIES, Inc. |
发明人 |
Cai Xiuyu;Xie Ruilong;Cheng Kangguo;Khakifirooz Ali |
| 分类号 |
H01L29/66;H01L29/78 |
主分类号 |
H01L29/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for fabricating a semiconductor structure, the method comprising:
providing a semiconductor substrate comprising a plurality of fin structures formed thereon; depositing a conformal liner over the fin structures; removing a first portion of the conformal liner, leaving a first space between the fins structures; forming a first metal gate in the first space between the fin structures; removing a second portion of the conformal liner, leaving a second space between the fin structures; and forming a second metal gate in the second space between the fin structures. |
| 地址 |
Armonk NY US |
