发明名称 MEMORY DEVICE AND MANUFACTURING METHOD THE SAME
摘要 A semiconductor device that can transmit and receive data without contact is popular partly as some railway passes, electronic money cards, and the like; however, it has been a prime task to provide an inexpensive semiconductor device for further popularization. In view of the above current conditions, a semiconductor device of the present invention includes a memory with a simple structure for providing an inexpensive semiconductor device and a manufacturing method thereof. A memory element included in the memory includes a layer containing an organic compound, and a source electrode or a drain electrode of a TFT provided in the memory element portion is used as a conductive layer which forms a bit line of the memory element.
申请公布号 US2014346505(A1) 申请公布日期 2014.11.27
申请号 US201414454113 申请日期 2014.08.07
申请人 Semiconductor Energy Laboratory Co., Ltd. 发明人 ASAMI Yoshinobu;TAKANO Tamae;SAKAKURA Masayuki;NOMURA Ryoji;YAMAZAKI Shunpei
分类号 H01L27/12;H01L29/786 主分类号 H01L27/12
代理机构 代理人
主权项 1. (canceled)
地址 Atsugi-shi JP