发明名称 |
INTERNAL PLASMA GRID FOR SEMICONDUCTOR FABRICATION |
摘要 |
The embodiments disclosed herein pertain to improved methods and apparatus for etching a semiconductor substrate. A plasma grid assembly is positioned in a reaction chamber to divide the chamber into upper and lower sub-chambers. The plasma grid assembly may include one or more plasma grids having slots of a particular aspect ratio, which allow certain species to pass through from the upper sub-chamber to the lower sub-chamber. Where multiple plasma grids are used, one or more of the grids may be movable, allowing for tenability of the plasma conditions in at least the lower sub-chamber. In some cases, an electron-ion plasma is generated in the upper sub-chamber. Electrons that make it through the grid to the lower sub-chamber are cooled as they pass through. In some cases, this results in an ion-ion plasma in the lower sub-chamber. |
申请公布号 |
SG10201401254V(A) |
申请公布日期 |
2014.11.27 |
申请号 |
SG10201401254V |
申请日期 |
2014.04.04 |
申请人 |
LAM RESEARCH CORPORATION |
发明人 |
PATERSON, ALEX;SINGH, HARMEET;MARSH, RICHARD A.;LILL, THORSTEN;VAHEDI, VAHID;WU, YING;SRIRAMAN, SARAVANAPRIYAN |
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