| 发明名称 |
DEVICE STRUCTURE SUITABLE FOR PARALLEL TEST |
| 摘要 |
A device structure suitable for parallel test is disclosed, which includes a main body and an anti-crosstalk structure. The main body includes a first well formed in a substrate, the first well defining a boundary of the main body in the substrate. The anti-crosstalk structure is a second well formed in the substrate and surrounding the first well of the main body. The second well has a conductivity type opposite to a conductivity type of the first well and has a depth greater than a depth of the first well. The present invention is capable of preventing the interference between leakage currents generated in bases of the same conductivity type of different such device structures during a parallel test, thereby allowing the leakage currents to be correctly measured and improving the reliability of measurement result and the test efficiency. |
| 申请公布号 |
US2014346510(A1) |
申请公布日期 |
2014.11.27 |
| 申请号 |
US201314083885 |
申请日期 |
2013.11.19 |
| 申请人 |
Shanghai Huali Microelectronics Corporation |
发明人 |
Yin Binfeng;Zhao Min;Zhou Ke |
| 分类号 |
H01L21/66 |
主分类号 |
H01L21/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A device structure suitable for parallel test, comprising: a main body and an anti-crosstalk structure, wherein:
the main body includes a first well formed in a substrate, the first well defining a boundary of the main body in the substrate; and the anti-crosstalk structure is a second well formed in the substrate, the second well surrounding the first well, having a conductivity type opposite to a conductivity type of the first well and having a depth greater than a depth of the first well. |
| 地址 |
Shanghai CN |
