METHOD AND APPARATUS FOR STABLE PLASMA PROCESSING

摘要

A method and apparatus for etching a substrate using a spatially modified plasma is provided herein. In one embodiment, the method includes providing a process chamber having a plasma stabilizer disposed above a substrate support pedestal. A substrate is placed upon the pedestal. A process gas is introduced into the process chamber and a plasma is formed from the process gas. The substrate is etched with a plasma having an ion density to radical density ratio defined by the plasma stabilizer.

主权项

1. An apparatus for plasma processing a substrate, comprising:
a plasma processing chamber; a substrate support pedestal disposed in the plasma processing chamber; an inductive antenna for forming a plasma within the plasma processing chamber; a plasma stabilizer member disposed in the plasma processing chamber above the substrate support pedestal, the plasma stabilizer member electrically isolated from the plasma processing chamber and having a diameter greater than a diameter of the pedestal and a plurality of apertures formed through the member; and a plurality of support legs supporting the plasma stabilizer member above the substrate support pedestal; and an edge ring disposed on the substrate support pedestal and having the plurality of support legs extending from the edge ring, wherein the plasma stabilizer member is secured to the edge ring.