PROTECTION DEVICE AND RELATED FABRICATION METHODS

摘要

Protection device structures and related fabrication methods are provided. An exemplary semiconductor protection device includes a first base region of semiconductor material having a first conductivity type, a second base region of semiconductor material having the first conductivity type and a dopant concentration that is less than the first base region, a third base region of semiconductor material having the first conductivity type and a dopant concentration that is greater than the second base region, an emitter region of semiconductor material having a second conductivity type opposite the first conductivity type within the first base region, and a collector region of semiconductor material having the second conductivity type. At least a portion of the second base region resides between the third base region and the first base region and at least a portion of the first base region resides between the emitter region and the collector region.

主权项

1. A semiconductor device comprising:
a first region of semiconductor material having a first conductivity type and a first dopant concentration; a second region of semiconductor material having the first conductivity type and a second dopant concentration that is less than the first dopant concentration; a third region of semiconductor material having the first conductivity type and a third dopant concentration that is greater than the second dopant concentration, wherein at least a portion of the second region is disposed between the third region and the first region; a fourth region of semiconductor material within the first region, the fourth region having a second conductivity type opposite the first conductivity type; and a fifth region of semiconductor material having the second conductivity type, wherein at least a portion of the first region is disposed between the fourth region and the fifth region.