| 发明名称 |
HIGH VOLTAGE LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTOR |
| 摘要 |
High-voltage LDMOS devices with voltage linearizing field plates and methods of manufacture are disclosed. The method includes forming an array of poly islands and a control gate structure by patterning a poly layer formed over a deep well region and a body of a substrate. The method further includes forming a metal shield in contact with the control gate structure and over the array of poly islands. |
| 申请公布号 |
US2014346596(A1) |
申请公布日期 |
2014.11.27 |
| 申请号 |
US201313902245 |
申请日期 |
2013.05.24 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
Ellis-Monaghan John J.;Letavic Theodore J.;Sharma Santosh;Shi Yun;Zierak Michael J. |
| 分类号 |
H01L29/66;H01L29/78 |
主分类号 |
H01L29/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method, comprising:
forming an array of poly islands and a control gate structure by patterning a poly layer formed over a deep well region and a body of a substrate; and forming a metal shield in contact with the control gate structure and over the array of poly islands. |
| 地址 |
Armonk NY US |
