CMP COMPOSITIONS SELECTIVE FOR OXIDE AND NITRIDE WITH HIGH REMOVAL RATE AND LOW DEFECTIVITY

摘要

The invention provides a chemical-mechanical polishing composition containing a ceria abrasive, an ionic polymer of formula I:;;wherein X1 and X2, Z1 and Z2, R2, R3, and R4, and n are as defined herein, and water, wherein the polishing composition has a pH of about 1 to about 4.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains silicon oxide, silicon nitride, and/or polysilicon.

主权项

1. A chemical-mechanical polishing composition comprising:
(a) a ceria abrasive, (b) an ionic polymer of formula I: wherein X1 and X2 are independently selected from hydrogen, —OH, and —COOH and wherein at least one of X1 and X2 is —COOH, Z1 and Z2 are independently O or S, R1, R2, R3, and R4 are independently selected from hydrogen, C1-C6 alkyl, and C7-C10 aryl, and n is an integer of about 3 to about 500, and (c) water,wherein the polishing composition has a pH of about 1 to about 4.5.