| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device which includes an oxide semiconductor film having improved reliability by providing stability.SOLUTION: A semiconductor device comprises a conductive film which contacts an oxide semiconductor film. When assuming that the most negative value among standard Gibbs energy of reaction obtained by assigning all elements included in the oxide semiconductor film to a reaction formula represented as the following formula (1) isΔrG, and the most negative value among standard Gibbs energy of reaction obtained by assigning all elements included in the conductive film to a reaction formula represented as the following formula (1) isΔrG,ΔrGandΔrGsatisfy the following formula (2):xM+O→yMO(1);ΔrG≤ΔrG(2).</p> |
