READING MEMORY ELEMENTS WITHIN A CROSSBAR ARRAY

摘要

A method for reading the state of a memory element within a crossbar memory array includes storing a first electric current sensed from a half-selected target memory element within the crossbar memory array; and outputting a final electric current based on the stored first electric current and a second electric current sensed from the target memory element when the target memory element is fully selected.

主权项

1. A method for reading memory elements within a crossbar memory array, the method comprising:
storing a first electric current sensed from half-selected memory elements along a selected column line within said crossbar memory array, said first electric condition resulting from bias voltages applied to at least one row intersecting said selected column line; and selecting a target memory element connected to said selected column line by applying a sense voltage to a row line connected to said target memory element; and outputting a final electric current based on said stored first electric current and a second electric current sensed from said target memory element with said sense voltage applied.