SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

This semiconductor device is configured to comprise a capacitor that is provided with: a lower electrode (601) which is arranged on a semiconductor substrate; a second protective film (602); a dielectric film (603) which has a defect (610) that extends in the film thickness direction from an upper surface (603S) that faces the second protective film; a third protective film (604) which has at least a defect filling film (604B) that is formed of an insulating body filling the defect (610); a first protective film (605) which covers the dielectric film (603) and the third protective film (604); and an upper electrode (606) which covers the first protective film (605).