| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element which can improve crystal quality of an epitaxial growth film and which achieves improvement in electrical conductivity.SOLUTION: A semiconductor light-emitting element having a gallium nitride compound semiconductor comprises: a substrate 11 of silicon or silicon compound; a buffer layer 12 on one principal surface of the substrate 11; and a semiconductor region 10 including a gallium nitride compound layer on the buffer layer 12 for obtaining a light-emitting function. The buffer layer 12 includes first layers 12a each composed of AlGaN (note that x is a value which satisfies 0<x≤1); second layers 12b each composed of GaN or AlGaN (note that y is a value which satisfies y<x and 0<y<1); and third layers 12c each composed of AlGaN (note that z is a value which satisfies y<z≤x), in which the second layers 12b and the third layers 12c are alternately laminated to form a composite layer 20 and the first layers 12a and the composite layers 20 are alternately laminated. |
