NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE

摘要

This nitride semiconductor light-emitting device is provided with a supporting substrate and an epitaxial layer. The p-side clad layer of the epitaxial layer contains a p-type dopant, while a p-side electrode is joined to the p-side clad layer. The p-type dopant is Mg. The X-ray absorption fine structure spectrum of the p-side clad layer has both a peak P1 and a peak P2. The peak P1 is the peak which appears first on the higher incident X-ray energy side of the K-absorption edge, while the peak P2 is the peak which is adjacent to the peak P1 and which appears second on the higher incident X-ray energy side thereof. The absorbance ratio of peak P1 to peak P2 is 70 to 200%.