INTEGRATION OF GALLIUM NITRIDE LEDS WITH ALUMINUM GALLIUM NITRIDE/GALLIUM NITRIDE DEVICES ON SILICON SUBSTRATES FOR AC LEDS

摘要

A method for fabricating an epitaxial structure includes providing a substrate (102, 202, 302, 402) and a heterojunction stack on a first side the substrate, and forming a GaN light emitting diode stack (134) on a second side of the substrate. The heterojunction stack includes an undoped gallium nitride (GaN) layer and a doped aluminum gallium nitride (AIGaN) layer on the undoped GaN layer. The GaN light emitting diode stack (134) includes an n-type GaN layer (136) over the substrate, a GaN/indium gallium nitride (InGaN) multiple quantum well (MQW) structure (138) over the n-type GaN layer, a p-type AIGaN layer (140) over the n-type GaN/InGaN MQW structure, and a p-type GaN layer (142) over the p-type AIGaN layer.