METHOD OF DIELECTRIC FILM FORMATION

摘要

FIELD: chemistry.SUBSTANCE: invention relates to the technology of obtaining semi-conductor devices and integrated circuits, in particular to methods of formation of dielectric titanium oxide-based films. In the method of formation of a dielectric film for the protection of the surface of p-n-junctions the formation of the dielectric film of titanium oxide is realised on the surface of substrates in a furnace by a vacuum cathode sputtering at a temperature of 800°C and a substrate temperature of 500°C. A halogen HBr serves as a carrying agent. The distance between the titanium oxide source and the substrate constitutes 9 cm. The thickness of the formed dielectric film of titanium oxide is 0.7±0.1 mcm.EFFECT: invention makes it possible to form the dielectric film of titanium oxide on the substrate surface at low temperatures.