发明名称 SPUTTERING TARGET
摘要 <p>Provided is a sputtering target composed of a metal matrix phase containing Co and a phase containing 6 to 25 mol % of an oxide that is dispersed in the form of grains (hereinafter, referred to as“oxide phase”); and the sputtering target is characterized in that the integral width of the highest peak among single peaks of XRD is 0.7 or less. A non-magnetic material grain-dispersed sputtering target is provided, which does not undergo the formation of initial particles during sputtering to thereby shorten a burn-in time and which enables the generation of steady discharge during sputtering.</p>
申请公布号 SG11201407011U(A) 申请公布日期 2014.11.27
申请号 SG11201407011U 申请日期 2013.09.13
申请人 JX NIPPON MINING & METALS CORPORATION 发明人 IKEDA YUKI
分类号 C23C14/34;G11B5/64;G11B5/851 主分类号 C23C14/34
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