METHOD OF GROWING &bgr;-Ga2O3-BASED SINGLE CRYSTAL, AND &bgr;-Ga2O3-BASED SINGLE CRYSTAL SUBSTRATE AND PRODUCTION METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a method of growing a &bgr;-GaO-based single crystal which provides a planar &bgr;-GaO-based single crystal with high crystal quality, a &bgr;-GaO-based single crystal substrate and a production method of the substrate.SOLUTION: A method of growing a &bgr;-GaO-based single crystal 25 includes bringing a planar seed crystal 20 into contact with a GaO-based molten liquid 12 and growing a planar &bgr;-GaO-based single crystal 25 having a principal plane 26a intersecting the (100) plane so as not to succeed crystal information of the evaporated product of the GaO-based molten liquid 12 adhered to the principal plane of the seed crystal 20. In growing the &bgr;-GaO-based single crystal 25, the shoulder of the &bgr;-GaO-based single crystal 25 is extended only in the thickness direction t. The &bgr;-GaO-based single crystal 25 is a planar single crystal with the (101), (-201) or (001) plane as the principal plane and is grown in the b-axis direction.