METHOD FOR PRODUCING THE P-N JUNCTION OF A THIN-FILM PHOTOVOLTAIC CELL AND CORRESPONDING METHOD FOR PRODUCING A PHOTOVOLTAIC CELL

摘要

The invention relates to a method for producing a p-n junction in a thin-film photovoltaic cell, comprising a deposition step wherein the following are successively produced: a layer of precursors (12, 13) of a photovoltaic material of type p or n, a barrier layer (14), and a layer (15) of precursors of a semi-conductor material of type n or p, said deposition step being followed by an annealing step carried out with a supply of S and/or Se. Said annealing step leads to the formation of an absorbent layer (22) of type p or n and a buffer layer (25) of type n or p and a p-n junction at the interface between said layers, the barrier layer (14) preventing chemical diffusion and oxidation at said interface during said annealing step.