| 摘要 |
FIELD: chemistry.SUBSTANCE: invention relates to the technology of manufacturing semi-conductor devices and integrated circuits, in particular to methods of protecting the surface of crystals of p-n junctions against different external influences. In the method of applying glass to protect the surface of crystals of p-n junctions against different external influences, a layer of borate glass, including the following components: is applied on a clean surface of a semi-conductor substrate 25% silicon oxide, 40% zinc borate, 20% aluminium oxide and 15% zinc oxide ZnO. The 1.2 mcm thick film of borate glass is formed at a temperature of the process of 700°C.EFFECT: achievement of stability and reduction of the penetration of sodium ions. |
