| 摘要 |
PROBLEM TO BE SOLVED: To provide a dielectric film forming method which enables the formation of a dielectric film having an increased insulating property at a film formation temperature of 180°C or below, and a film forming apparatus for forming such dielectric film. SOLUTION: The method includes: the step of separately supplying Zr(BH<SB POS="POST">4</SB>)<SB POS="POST">4</SB>gas forced to go out by supplying Ar gas to a material tank TK from a massflow controller MFC1, and oxygen atom-containing gas activated by excitation in a microwave plasma source PL to a space on a surface of a substrate S through holes provided in a shower plate 36. In this step, the Zr(BH<SB POS="POST">4</SB>)<SB POS="POST">4</SB>sublimated gas may be supplied several times intermittently during the time when the activated oxygen atom-containing gas is being supplied continuously. In this way, a ZrBO film which is a dielectric film containing zirconium, boron and oxygen is formed on the surface of the substrate S and the interior surface of a through-hole that the substrate S has. COPYRIGHT: (C)2012,JPO&INPIT |
