发明名称 |
SEMICONDUCTOR-DEVICE MANUFACTURING METHOD, STORAGE MEDIUM, AND SEMICONDUCTOR DEVICE |
摘要 |
A semiconductor device manufacturing method includes forming a second conductive layer on an underlying layer which has an insulating layer in which a recess is formed and a first conductive layer exposed on a bottom surface of the recess; forming a third conductive layer on the second conductive layer; supplying, into the third conductive layer, a material solid-soluble in the third conductive layer; and heating the third conductive layer into which the solid-soluble material is supplied. |
申请公布号 |
KR20140135709(A) |
申请公布日期 |
2014.11.26 |
申请号 |
KR20147023355 |
申请日期 |
2013.02.14 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
MATSUMOTO KENJI;HAMADA TATSUFUMI |
分类号 |
H01L21/3205;C23C14/34;H01L21/768;H01L23/532 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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