发明名称 SEMICONDUCTOR-DEVICE MANUFACTURING METHOD, STORAGE MEDIUM, AND SEMICONDUCTOR DEVICE
摘要 A semiconductor device manufacturing method includes forming a second conductive layer on an underlying layer which has an insulating layer in which a recess is formed and a first conductive layer exposed on a bottom surface of the recess; forming a third conductive layer on the second conductive layer; supplying, into the third conductive layer, a material solid-soluble in the third conductive layer; and heating the third conductive layer into which the solid-soluble material is supplied.
申请公布号 KR20140135709(A) 申请公布日期 2014.11.26
申请号 KR20147023355 申请日期 2013.02.14
申请人 TOKYO ELECTRON LIMITED 发明人 MATSUMOTO KENJI;HAMADA TATSUFUMI
分类号 H01L21/3205;C23C14/34;H01L21/768;H01L23/532 主分类号 H01L21/3205
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