| 摘要 |
Metal oxide semiconductor (MOS) protection circuits and methods of forming the same are disclosed. In one embodiment, an integrated circuit includes a pad (61), a p-type MOS (PMOS) transistor (65), a first n-type MOS (NMOS) transistor (62), and a second NMOS transistor (66). The first NMOS transistor includes a drain, a source, and a gate electrically connected to the pad, a first supply voltage, and a drain of the PMOS transistor, respectively. The second NMOS transistor includes a gate, a drain, and a source electrically connected to a bias node, a second supply voltage, and a source of the PMOS transistor, respectively. The source of the second NMOS transistor is further electrically connected to a body of the PMOS transistor so as to prevent a current flowing from the drain of the PMOS transistor to the second supply voltage through the body of PMOS transistor when a transient signal event is received on the pad. |
