发明名称 Semiconductor device and circuit with dynamic control of electric field
摘要 A circuit, comprising a semiconductor device with one or more field gate terminals for controlling the electric field in a drift region of the semiconductor device; and a feedback circuit configured to dynamically control a bias voltage or voltages applied to the field gate terminal or terminals, with different control voltages used for different semiconductor device characteristics in real-time in response to a time-varying signal at a further node in the circuit.
申请公布号 EP2806460(A2) 申请公布日期 2014.11.26
申请号 EP20140169718 申请日期 2014.05.23
申请人 NXP B.V. 发明人 DINH,, VIET THANH;HURKX,, GODEFRIDUS ANTONIUS MARIA;VANHOUCKE,, TONY;SLOTBOOM,, JAN WILLEM;HERINGA,, ANCO;ZAHARIEV,, IVAN;GRIDELET,, EVELYNE
分类号 H01L29/40;H01L29/732;H03F3/20 主分类号 H01L29/40
代理机构 代理人
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