Semiconductor device and circuit with dynamic control of electric field
摘要
A circuit, comprising a semiconductor device with one or more field gate terminals for controlling the electric field in a drift region of the semiconductor device; and a feedback circuit configured to dynamically control a bias voltage or voltages applied to the field gate terminal or terminals, with different control voltages used for different semiconductor device characteristics in real-time in response to a time-varying signal at a further node in the circuit.
申请公布号
EP2806460(A2)
申请公布日期
2014.11.26
申请号
EP20140169718
申请日期
2014.05.23
申请人
NXP B.V.
发明人
DINH,, VIET THANH;HURKX,, GODEFRIDUS ANTONIUS MARIA;VANHOUCKE,, TONY;SLOTBOOM,, JAN WILLEM;HERINGA,, ANCO;ZAHARIEV,, IVAN;GRIDELET,, EVELYNE