发明名称 VOLTAGE LEVEL SHIFTER AND SYSTEMS IMPLEMENTING THE SAME
摘要 <p>According to the inventive concepts disclosed in the present specification, a level shifter can include an input node in a first voltage domain and an output node in a second voltage domain higher than the first voltage domain. The input node receives an input signal in the first low-voltage domain, and the output node is configured to output a representation of the input signal in the second high-voltage domain. A low-voltage control circuit can control the supply of a low-voltage level to a boundary node located at a boundary between the first and second domains. A high-voltage control circuit can also be provided to control the supply of a high-voltage level to the boundary node. The low-voltage control circuit can cut off the low-voltage supply to the boundary node when the high-voltage control circuit supplies the high-voltage level to the boundary node. For example, the high-voltage control circuit can include logic circuitry that enables or disables a connection to the high-voltage supply. Alternatively, the high-voltage control circuit can include a boost capacitor coupled between the output node and the boundary node.</p>
申请公布号 KR20140135597(A) 申请公布日期 2014.11.26
申请号 KR20140022777 申请日期 2014.02.26
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 SON JIN SEUNG;KENKARE PRASHANT
分类号 G11C5/14 主分类号 G11C5/14
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