发明名称 半導体記憶装置
摘要 A semiconductor storage device comprises a timing control circuit that generates a signal for controlling at least one of a read operation and a write operation; an input-signal pad; a plurality of control-signal pads; and a switch circuit coupled to at least one of the plurality of control-signal pads. The switch circuit generates a first control signal to be supplied to the timing control circuit based on a signal from the input-signal pad in a first mode.
申请公布号 JP5629962(B2) 申请公布日期 2014.11.26
申请号 JP20080019316 申请日期 2008.01.30
申请人 发明人
分类号 G11C29/12;G01R31/28;G11C11/401;G11C29/14 主分类号 G11C29/12
代理机构 代理人
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