发明名称 MRAM FIELD DISTURB DETECTION AND RECOVERY
摘要 <p>A method and memory device is provided for reading data from an ECC word of a plurality of reference bits associated with a plurality of memory device bits and determining if a double bit error in the ECC word exists. The ECC word may be first toggled twice and the reference bits reset upon detecting the double bit error.</p>
申请公布号 EP2715541(A4) 申请公布日期 2014.11.26
申请号 EP20120792839 申请日期 2012.05.31
申请人 EVERSPIN TECHNOLOGIES, INC. 发明人 ANDRE, THOMAS;ALAM, SYED M.;ENGEL, BRADLEY;BUTCHER, BRIAN
分类号 G06F11/10;G11C29/44;H03M13/11 主分类号 G06F11/10
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