| 摘要 |
<p>This disclosure concerns a semiconductor memory device comprising a supporting substrate including semiconductor materials; an insulation film provided above the supporting substrate; a first diffusion layer provided on the insulation film; a second diffusion layer provided on the insulation film; a body region provided between the first diffusion layer and the second diffusion layer, the body region being in an electrically floating state and accumulating or releasing electric charges for storing data; a semiconductor layer connected to the second diffusion layer to release electric charges from the second diffusion layer; a gate insulation film provided on the body region; and a gate electrode provided on the gate insulation film.
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