| 摘要 |
A chemical vapor deposition or epitaxial-layer growth reactor includes a reaction chamber. At least one substrate carrier and a supporter for supporting the substrate carrier are provided in the reaction chamber. The substrate carrier includes a first surface and a second surface. The second surface of the substrate carrier is provided with at least one recess concaved inwardly. The supporter includes: a spindle part; a supporting part connected to one end of the spindle part and extending outwardly from the periphery of the spindle part, the supporting part including a supporting surface; and a plug-in part connected to the spindle part and extending by a height towards the first surface of the substrate carrier, the plug-in part of the supporter being inserted detachably in the recess, so as to enable the substrate carrier to be placed on and supported by the supporter. |
