| 摘要 |
#CMT# #/CMT# The chamber (7) has a storage zone (8) for storing an element of group II of periodic table i.e. liquid mercury, a receiving zone (9) for receiving semi-conductor material of II-VI type, and a separating partition (12) provided at the level of an intermediate zone (13). The separating partition has passage aperture (14) that is equipped with an anti-reverse gas flow unit i.e. ball type anti-return valve (15), to ensure one-way passage of the liquid mercury, in vapor phase, from the storage zone to the receiving zone. A thermal insulator (16) is provided at the level of the intermediate zone. #CMT# : #/CMT# Independent claims are also included for the following: (1) a device for annealing II-VI type semi-conductor material, comprising an annealing chamber (2) a method for annealing II-VI type semi-conductor material. #CMT#USE : #/CMT# Quartz hermetic chamber i.e. quartz boat, for annealing II-VI type semi-conductor material i.e. cadmium mercury telluride (claimed), that is utilized for intrinsic infrared detection application. Can also be used for annealing other semi-conductor material such as cadmium telluride, gallium arsenide, gallium phosphide or Indium phosphide. #CMT#ADVANTAGE : #/CMT# The configuration of the chamber permits doping of the II-VI type semi-conductor material in a precise, repoducible, reliable and easy manner to assure better quality of the doped material during heat treatment, while reducing the risk of contamination of the liquid mercury. The thermal insulator reduces the heat exchange between the storage and receiving zones to improve the heating and/or cooling control of the storage and receiving zones. The chamber is configured such that a control unit regulates the temperature of heating units so as to control temperature gradients in the chamber by simultaneous and consecutive heating of the storage and receiving zones, thus annealing the II-VI type semi-conductor material in an efficient manner. The anti-reverse gas flow unit ensures one-way passage of the element of group II of the periodic table, in vapor phase, from the storage zone to the receiving zone, without manipulation or without any contact with objects. #CMT#DESCRIPTION OF DRAWINGS : #/CMT# The drawing shows a schematic sectional view of a chamber for annealing II-VI type semi-conductor material. 7 : Quartz hermetic chamber 8 : Storage zone 9 : Receiving zone 12 : Separating partition 13 : Intermediate zone 14 : Passage aperture 15 : Ball type anti-return valve 16 : Thermal insulator. |
