发明名称 Gate drive circuit of the voltage drive type semiconductor element and power converter
摘要 <p>A power converting apparatus having a gate drive circuit including a push-pull circuit (10) consisting of two transistors (2, 3) at its output stage; a diode (5) connected in series with the push-pull circuit (10); a gate power source (1) connected in parallel with the series circuit of the push-pull circuit (10) and the diode (5); a negative voltage generating circuit (6) connected in parallel with the push-pull circuit (10); a transistor (4) connected between the output terminal of the negative voltage generating circuit (6) and the negative terminal of the gate power source (1), wherein the output voltage of the push-pull circuit (10) is switched from positive polarity to negative polarity and vice versa depending on the signal applied to the base terminals of the transistors (2, 3, 4). </p>
申请公布号 EP2367271(A3) 申请公布日期 2014.11.26
申请号 EP20110154820 申请日期 2011.02.17
申请人 HITACHI LTD. 发明人 URUNO, JUNPEI;SHOJI, HIROYUKI;ISOGAI, MASAYUKI
分类号 H02M1/08;H02M7/538;H03K17/16 主分类号 H02M1/08
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