| 发明名称 |
MICROSTRUCTURED ELECTRODE STRUCTURES |
| 摘要 |
A structure for use in an energy storage device, the structure comprising a backbone system extending generally perpendicularly from a reference plane, and a population of microstructured anodically active material layers supported by the lateral surfaces of the backbones, each of the microstructured anodically active material layers having a void volume fraction of at least 0.1 and a thickness of at least 1 micrometer. |
| 申请公布号 |
KR20140135691(A) |
申请公布日期 |
2014.11.26 |
| 申请号 |
KR20147020881 |
申请日期 |
2013.01.24 |
| 申请人 |
ENOVIX CORPORATION |
发明人 |
LAHIRI ASHOK;SPOTNITZ ROBERT M.;SHAH NIRAV S.;RAMASUBRAMANIAN MURALI;RUST III HARROLD J.;WILCOX JAMES D.;ARMSTRONG MICHAEL J.;BRUSCA BRIAN E.;CASTLEDINE CHRISTOPHER G.;LAUCHLAN LAURIE J. |
| 分类号 |
H01M4/02;H01M4/13;H01M4/134;H01M4/38;H01M10/05;H01M10/058 |
主分类号 |
H01M4/02 |
| 代理机构 |
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