| 摘要 |
<p>A semiconductor device and a manufacturing method thereof are provided to suppress the plug from being high voltage-resistant and improve the internal pressure failure between the gate electrode of the high resisting voltage metal insulator semiconductor field effect transistor and the wiring. A semiconductor device comprises the gate insulating layers(7,8), the gate electrodes(10a,10b), the MISFET, the insulating layer, the first plug, the second plug, the source wiring, and the drain wiring. The gate insulating layer is formed on the semiconductor substrate(1S). The gate electrode is formed on the gate insulating layer. The MISFET has the source region and the drain region which are matched to the gate electrode and are formed. The insulating layer is formed on the MISFET. The first plug is electrically connected to the source region through the insulating layer. The second plug is electrically connected to the drain region through the insulating layer. The source wiring and the drain wiring are formed on the insulating layer. The source wiring electrically connects with the first plug. The drain wiring electrically connects with the second plug.</p> |
