| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a ZnO deposited film in which the productivity of film deposition is high, volume resistivity is low, and also, the increase of the volume resistivity is suppressed in a high moisture environment, and to provide a method for depositing the film. <P>SOLUTION: A ZnO sintered compact containing 0.1 to 15 mass% rare earth elements is used for a vapor deposition material, and film deposition is performed by a reactive vapor deposition process in an oxygen gas flow rate of 0 to 500 sccm and at a film deposition rate of 0.5 to 5.0 nm/s, so as to deposit a ZnO film having high moisture resistance. The rare earth elements are preferably at least one kind selected from Sc, Y, La, Ce, Pr, Nd, Pm and Sm. <P>COPYRIGHT: (C)2010,JPO&INPIT |
