Method of manufacturing a photoelectric device

摘要

A method of manufacturing a photoelectric device comprising: providing a substrate; applying a first doping source material to a first surface of the substrate, so as to form a first doping material layer over the said first surface; applying a drive-in process to cause a dopant from the first doping material layer to diffuse into the substrate; and applying a second doping source material to the said first surface of the substrate, so as to form a second doping material layer over the said first doping material layer.

According to one or more embodiments of the present invention, a photoelectric device capable of reducing a contact resistance with electrodes, reducing a serial resistance of photocurrent paths, and suppressing a surface recombination loss caused by excessive increases in a junction depth and a surface concentration is provided.