发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, METHOD FOR PROCESSING SUBSTRATE, SUBSTRATE PROCESSING DEVICE AND RECORDING MEDIUM |
摘要 |
In order to extend the cycle of gas cleaning for a film-forming device, a method for manufacturing a semiconductor device includes: a substrate carry-in process for carrying a substrate into a processing chamber; a film forming process for laminating at least two types of films on the substrate in the processing chamber; a substrate carry-out process for carrying the film laminated substrate out from the processing chamber; an etching process for supplying an etching gas into the processing chamber while the substrate is not in the processing chamber after the substrate carry-out process. The etching process includes a first cleaning process for supplying a fluorine-containing gas activated by plasma excitation into the processing chamber as an etching gas; and a second cleaning process for supplying a fluorine-containing gas activated by heat into the processing chamber as an etching gas. |
申请公布号 |
KR20140135762(A) |
申请公布日期 |
2014.11.26 |
申请号 |
KR20147026035 |
申请日期 |
2013.03.22 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC. |
发明人 |
SANO ATSUSHI;ASAI MASAYUKI;YONEBAYASHI MASAHIRO |
分类号 |
H01L21/302;C23C16/42;C23C16/44;H01L21/3065;H01L21/31;H01L21/318 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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