| 摘要 |
A semiconductor device includes: a semiconductor substrate; a pair of first diffusion layer regions provided near a top face of the semiconductor substrate; a channel region provided between the first diffusion layer regions of the semiconductor substrate; a gate insulation film provided on the channel region and on the semiconductor substrate such as to overlap with at least part of the first diffusion layer regions; a gate electrode provided on the insulation film; a pair of silicon selective growth layers provided on the semiconductor substrate at both sides of the gate electrode, each of the pair of silicon selective growth layers overlapping with at least part of the first diffusion layer regions, and being provided at a distance from the gate electrode; second diffusion layer regions provided in each of the silicon selective growth layers, peak positions of impurity concentration of the second diffusion layer regions being shallower than bottoms of the silicon selective growth layers; and third diffusion layer regions provided near side faces of the silicon selective growth layers, and electrically connecting the first diffusion layer regions to the second diffusion layer regions. |
