| 摘要 |
A semiconductor device which includes: a first semiconductor layer (4) of a first conductivity type; a second semiconductor layer (2) of a second conductivity type that is formed near a surface of the first semiconductor layer (4); a first main electrode (11) that is electrically connected to the second semiconductor layer (2); a third semiconductor layer (6) of the second conductivity type that neighbors the first semiconductor layer (4) and is formed near a surface of the first semiconductor layer (4) opposite to the second semiconductor layer (2); a fourth semiconductor layer (7) of the first conductivity type that is selectively disposed in an upper portion of the third semiconductor layer (6); a second main electrode (14) that is electrically connected to the third semiconductor layer (6) and the fourth semiconductor layer (7); a trench (17) whose side face is in contact with the third semiconductor layer (6) and the fourth semiconductor layer (7), while reaching the first semiconductor layer (4); a gate electrode (9) that is formed along the side face of the trench (17) by a sidewall of polysilicon; and a polysilicon electrode (18) that is disposed away from the gate electrode (9) within the trench (17) and electrically connected to the second main electrode (14). |
