| 摘要 |
PROBLEM TO BE SOLVED: To provide a cleanliness evaluation method which can evaluate cleanliness of a vapor phase epitaxy apparatus with high sensitivity. SOLUTION: A cleanliness evaluation method of a vapor phase epitaxy apparatus comprises: preparing a silicon wafer having a thickness of 1000μm or less and 2000μm or more; manufacturing a monitor wafer in which a silicon epitaxial layer is grown on the silicon wafer by using the vapor phase epitaxy apparatus; measuring a lifetime value of the monitor wafer; and evaluating cleanliness of the vapor phase epitaxy apparatus based on the measured lifetime value of the monitor wafer. COPYRIGHT: (C)2013,JPO&INPIT |
