| 摘要 |
PROBLEM TO BE SOLVED: To provide a GaN based HFET which can restrict reduction in dynamic withstand voltage. SOLUTION: In a GaN based HFET, a two-dimensional electron gas removal region 260B is located outward in the longer direction with respect to a virtual line M71 extending in the short direction from one end part 211A of the longer direction of a drain electrode 211, and is formed in a GaN based laminate 205 beneath a region adjacent in the short direction to one end part 212A of a source electrode 212. Also, a two-dimensional electron gas removal region 260A abuts on the outer side in the longer direction of the two-dimensional electron gas removal region 260B, and extends in the short direction along a source electrode connection part 214 from the end part 212A of the source electrode 212. The presence of the two-dimensional electron gas removal regions 260A and 260B prevent the concentration of electron flows heading from the end part 212A of the source electrode 212 toward the end part 211A of the drain electrode 211 due to dynamic fluctuations in electric field at switching time. COPYRIGHT: (C)2013,JPO&INPIT |
