发明名称 自己整列式縦ヒータと低抵抗率界面を備えた相変化メモリセル
摘要 A low resistivity interface material is provided between a self-aligned vertical heater element and a contact region of a selection device. A phase change chalcogenide material is deposited directly on the vertical heater element. In an embodiment, the vertical heater element in L-shaped, having a curved vertical wall along the wordline direction and a horizontal base. In an embodiment, the low resistivity interface material is deposited into a trench with a negative profile using a PVD technique. An upper surface of the low resistivity interface material may have a tapered bird-beak extension.
申请公布号 JP5631645(B2) 申请公布日期 2014.11.26
申请号 JP20100151445 申请日期 2010.06.15
申请人 マイクロン テクノロジー, インク. 发明人 バルバラ ツァンデリギ;フランチェスコ ピピア
分类号 H01L27/105;G11C13/00;H01L45/00 主分类号 H01L27/105
代理机构 代理人
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