SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME

摘要

After proton implantation (16) is performed, a hydrogen-induced donor is formed by a furnace annealing process to form an n-type field stop layer (3). A disorder generated in a proton passage region (14) is reduced by a laser annealing process to form an n-type disorder reduction region (18). As such, the n-type field stop layer (3) and the n-type disorder reduction region (18) are formed by the proton implantation (16). Therefore, it is possible to provide a stable and inexpensive semiconductor device which has low conduction resistance and can improve electrical characteristics, such as a leakage current, and a method for producing the semiconductor device.