| 摘要 |
A memory control method is used for controlling a flash memory. The flash memory includes a first memory element and a second memory element. The second memory element includes a plurality of blocks, and each block includes a plurality of pages. In this method, original data are written to the first memory element. Input data are obtained by reading the original data from the first memory element. The input data includes a plurality of input data rows. The input data rows are divided into data groups. An input data row corresponding to each data row is written to a corresponding data page on the second memory element. A parity row corresponding to each data group is written to a data page on the second memory element. The number of data rows for each data group is smaller than the number of respective blocks in the second memory element. |
