Solid-state imaging device, production method of the same, and imaging apparatus

摘要

A solid-state imaging device in which a pixel circuit formed on the first surface side of a semiconductor substrate is shared by a plurality of light reception regions and second surface side of the semiconductor substrate is the light incident side of the light reception regions. The second surface side regions of the light reception regions are arranged at approximately even intervals and the first surface side regions of the light reception regions e are arranged at uneven intervals. Respective second surface side regions and first surface side regions are joined in the semiconductor substrate so that the light reception regions extend from the second surface side to the first surface side of the semiconductor substrate.

主权项

1. An imaging device, comprising:
a semiconductor substrate having a first side and a second side, opposite the first side, as a light incident side; a plurality of transistors disposed at the first side of the semiconductor substrate; and first, second, and third light reception units disposed in the semiconductor substrate, each of the first, second, and third light reception units having a respective first impurity region positioned adjacent the first side of the semiconductor substrate and a respective second impurity region positioned adjacent the second side of the semiconductor substrate; wherein:
the first and second light reception units share at least one shared transistor from the plurality of transistors;the second and third light reception units are neighboring;the second impurity regions of the first, second, and third light reception units are arranged at substantially even intervals; anda smallest distance between the first impurity regions of the first and second light reception units is different than a smallest distance between the first impurity regions of the second and third light reception units.